HIGHER in NPN transistors, they are PREFERRED more as it will result in a smooth flow of charge CARRIERS.Explanation:Mobility (μ): It is defined as drift velocity per unit electric field applied i.e.\(\mu = \frac{{{v_d}}}{E} = \frac{{q\tau }}{m}\)m = effective MASS of the charged particleThe effective mass of holes is more than that of electrons. This results in less mobility of holes.NOTES:NPN transistor: It is formed by sandwiching a thin layer of P-type semiconductor between two N-type semiconductors. Electrons are the carriers responsible for current flow.PNP transistor: It is formed by sandwiching a thin layer of N-type semiconductor between two P-type semiconductors. Holes are the carriers responsible for current flow.

"> HIGHER in NPN transistors, they are PREFERRED more as it will result in a smooth flow of charge CARRIERS.Explanation:Mobility (μ): It is defined as drift velocity per unit electric field applied i.e.\(\mu = \frac{{{v_d}}}{E} = \frac{{q\tau }}{m}\)m = effective MASS of the charged particleThe effective mass of holes is more than that of electrons. This results in less mobility of holes.NOTES:NPN transistor: It is formed by sandwiching a thin layer of P-type semiconductor between two N-type semiconductors. Electrons are the carriers responsible for current flow.PNP transistor: It is formed by sandwiching a thin layer of N-type semiconductor between two P-type semiconductors. Holes are the carriers responsible for current flow.

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n-p-n transistors are preferred over p-n-p transistors because they have

Electronics Bipolar Junction Transistors in Electronics 11 months ago

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Since the mobility of electrons is HIGHER in NPN transistors, they are PREFERRED more as it will result in a smooth flow of charge CARRIERS.Explanation:Mobility (μ): It is defined as drift velocity per unit electric field applied i.e.\(\mu = \frac{{{v_d}}}{E} = \frac{{q\tau }}{m}\)m = effective MASS of the charged particleThe effective mass of holes is more than that of electrons. This results in less mobility of holes.NOTES:NPN transistor: It is formed by sandwiching a thin layer of P-type semiconductor between two N-type semiconductors. Electrons are the carriers responsible for current flow.PNP transistor: It is formed by sandwiching a thin layer of N-type semiconductor between two P-type semiconductors. Holes are the carriers responsible for current flow.

Posted on 04 Nov 2024, this text provides information on Electronics related to Bipolar Junction Transistors in Electronics. Please note that while accuracy is prioritized, the data presented might not be entirely correct or up-to-date. This information is offered for general knowledge and informational purposes only, and should not be considered as a substitute for professional advice.

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